Specialty Materials
The drive toward making electronics faster, denser, and cheaper continues unabated. Shrinking device dimensions and structure changes place additional demands on the materials used in all steps of semiconductor processing. As device scaling continues, contamination and material purity become more important than ever and can be tackled by changing how deposition and etch tools are coated. Integrating new chemistries in deposition and etching steps can alleviate vertical scaling challenges as well.
With our advanced materials science expertise and our determination to help solve your most advanced technology challenges, we are prepared to help you maintain unprecedented levels of cleanliness. By providing precision-engineered specialty coatings and innovative precursor and plasma combinations for your applications, together we can enable high throughput and high yield to support the ever-increasing device storage needs.
Featured White Paper
Solid Precursors for 3D Architectures: Materials, Processing, and Delivery
This paper discusses how processes and equipment are evolving to accommodate a growing array of solid precursors, and explains how IDMs can successfully work with solid precursors to yield the advanced logic and memory chips needed to drive the next generation of data processing and storage devices.
White Paper
96 Layers and Beyond: 3D NAND Material and Integration challenges
Decades-old practices are no longer effective when increasing the number of 3D NAND structures to 96 layers and beyond.
Featured Webinar
Protecting Plasma Chamber Parts and Components with Advanced Coatings
Learn the importance of advanced coatings for chamber parts and components, and discover three successful coating methods in this recorded webinar with Connor Gallegos, Product Manager, and Nilesh Gunda, Director, Coatings Product Technology.
Featured Insights
Three-dimensional vertically-stacked memory architectures offer exponential gains in flash memory storage, but they also introduce fundamental new challenges at the device fabrication and integration level. We understand many of these challenges and have ideal solutions for them.
Decades-old practices are no longer effective when increasing the number of 3D NAND structures to 96 layers and beyond.
Semiconductor processing at advanced nodes requires extreme levels of cleanliness to minimize the risk of yield loss associated with submicroscopic contaminants. At Entegris, we understand these challenges and offer precision-engineered coatings that extend tool life while improving device yield.
With semiconductor nodes shrinking to 10 nm and below and once-flat architectures evolving into complex 3D structures, whole new paradigms in material deposition must be developed. Entegris takes a holistic approach to advanced material development, yielding industry-leading innovation.
Learn more about operational excellence at Entegris and our focus on material purity and preventing defects, our adherence to safety and environmental standards with technology such as SDS® cylinders, gas cabinets, and delivery systems, and our ability to supply locally.
Trends put pressure on power integrated circuit (IC) manufacturers to produce higher volumes of chips using technologies designed to withstand high-temperature, high-frequency operating environments. Part of the answer lies in transitioning from silicon substrates to silicon carbide (SiC) and gallium nitride (GaN). Learn about solutions to improve SiC slurry performance and meet the needs of power IC manufacturers.
Entegris offers a total solution: screening, synthesis, and characterization of candidate chemistries, novel ampoules to deliver solids with high delivery rates and excellent utilization, and a cabinet to deliver chemistry consistently.
As semiconductor nodes shrink to 10 nm and below, improvements in materials and process integration are required. In order to deliver industry-leading innovation, Entegris uses a holistic approach in the development of formulated chemistries, CMP pad conditioners, and brushes.
A toolbox approach to choosing the most appropriate precursor and plasma combination for a given application makes process development more efficient, benefiting semiconductor device manufacturers and their customer.